STL7NM60N STMicroelectronics, STL7NM60N Datasheet

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STL7NM60N

Manufacturer Part Number
STL7NM60N
Description
MOSFET N-CH 600V 5.8A POWERFLAT
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STL7NM60N

Input Capacitance (ciss) @ Vds
363pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
14-PowerFLAT™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11043-2
Features
1. The value is rated according Rthj-case
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
January 2011
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STL7NM60N
Order code
STL7NM60N
Order code
Device summary
V
T
650 V
DSS @
JMAX
N-channel 600 V, 0.805 Ω , 5.8 A PowerFLAT™ (5x5)
< 0.90 Ω
R
max.
DS(on)
7NM60N
Marking
5.8 A
Doc ID 18348 Rev 1
I
D
(1)
Figure 1.
PowerFLAT™ (5x5)
Drain
MDmesh™ II Power MOSFET
(not connected)
Pin 1
Package
S 3
S 2
S 4
Internal schematic diagram
PowerFLAT (5x5)
14
D
5
D
STL7NM60N
13
6
D
D
Tape and reel
Packaging
12
D
7
D
www.st.com
11 G
10 S
8 S
9 S
1/12
12

Related parts for STL7NM60N

STL7NM60N Summary of contents

Page 1

... Device summary Order code STL7NM60N January 2011 MDmesh™ II Power MOSFET R DS(on max. < 0.90 Ω (1) 5.8 A Figure 1. (not connected) Drain Marking 7NM60N PowerFLAT™ (5x5) Doc ID 18348 Rev 1 STL7NM60N PowerFLAT (5x5) Internal schematic diagram Pin Package Packaging Tape and reel D 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 18348 Rev 1 STL7NM60N ...

Page 3

... STL7NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (2), (5) I Drain current (pulsed) DM (5) P Total dissipation at T TOT (1) P Total dissipation at T TOT ...

Page 4

... V = 480 = (see Figure 15) DSS Doc ID 18348 Rev 1 Min. Typ 600 GS = 250 µ 2.5 A 0.805 D Min. Typ. 363 - 24.6 1 480 V - 130 - 5 2.7 2.7 oss STL7NM60N Max. Unit V 1 µA 100 µA 100 Ω 0.90 Max. Unit Ω when V DS ...

Page 5

... STL7NM60N Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) (2) I Source-drain current (pulsed) SDM , (3) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... V (V) 100 DS Figure 5. AM06477v1 ( ( AM06479v1 DS(on) (V) ( Ohm 0.88 500 0.86 400 0.84 300 0.82 0.80 200 0.78 100 0. (nC) g Doc ID 18348 Rev 1 STL7NM60N Thermal impedance Transfer characteristics V =20V Static drain-source on resistance ) V =10V AM06478v1 V (V) GS AM06480v1 I (A) D ...

Page 7

... STL7NM60N Figure 8. Capacitance variations C (pF) 1000 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 I =250µA D 1.00 0.90 0.80 0.70 - Figure 12. Normalized B VDSS BV DSS (norm) I =1mA 1.07 D 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 - Figure 9. AM06481v1 E oss (µ ...

Page 8

... AM01468v1 Figure 17. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 19. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 18348 Rev 1 STL7NM60N 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL7NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 18348 Rev 1 Package mechanical data ® ...

Page 10

... PowerFLAT™(5x5) mechanical dimensions Dim Figure 20. PowerFLAT™(5x5) mechanical drawing 10/12 mm Min. Typ. 0.80 0.90 0 0.02 0.24 4.90 5.0 4.90 5.0 2.49 2.57 1.22 1.27 0.43 0.51 0.64 0.71 Doc ID 18348 Rev 1 STL7NM60N Max. 1.0 0.05 0.90 5.10 5.10 2.64 1.32 0.58 0.79 ...

Page 11

... STL7NM60N 5 Revision history Table 9. Document revision history Date 18-Jan-2011 Revision 1 First release Doc ID 18348 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 18348 Rev 1 STL7NM60N ...

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