IRFH5104TR2PBF International Rectifier, IRFH5104TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRFH5104TR2PBF
• Description: MOSFET N-CH 40V 24A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5104TR2PBF

• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 114 W
• Gate Charge Qg: 53 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
0.1
0.1
100
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
3
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
4
V GS , Gate-to-Source Voltage (V)
4.5V
C oss
V DS , Drain-to-Source Voltage (V)
C rss
C iss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
5
T J = 25°C
6
V DS = 15V
≤60µs PULSE WIDTH
10
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
7
TOP
BOTTOM
8
100
9
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
10
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
10
14.0
12.0
10.0
1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 50A
V GS = 10V
I D = 50A
4.5V
V DS , Drain-to-Source Voltage (V)
10
T J , Junction Temperature (°C)
1
Q G , Total Gate Charge (nC)
20
V DS = 32V
V DS = 20V
VDS= 8.0V
30
≤ 60µs PULSE WIDTH
Tj = 150°C
10
40
TOP
BOTTOM
100
50
60
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
70
3