BSC0901NS Infineon Technologies, BSC0901NS Datasheet - Page 9

• Manufacturer Part Number: BSC0901NS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC0901NS

• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 140 S, 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC0901NSTR

Final Data Sheet
Table 14
Table 15
13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
AV
=f(T
); R
GS
j
); I
=25 Ω; parameter: T
D
=1 mA
j(start)
8
14 Typ. gate charge
V
16 Gate charge waveforms
GS
=f(Q
gate
); I
D
=30 A pulsed; parameter: V
Electrical characteristics diagrams
OptiMOS™ Power-MOSFET
2.0, 2011-03-01
BSC0901NS
DD