BSC011N03LS Infineon Technologies, BSC011N03LS Datasheet - Page 10

• Manufacturer Part Number: BSC011N03LS
• Description: MOSFET N-CH 30V 100A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSC011N03LS

• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Power - Max: 96W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Forward Transconductance Gfs (max / Min): 170 S, 85 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSC011N03LSTR

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Figure 1
Preliminary Data Sheet
Package outline
Outlines PG-TDSON-8, dimensions in mm/inches
9
OptiMOS™ Power-MOSFET
BSC011N03LS
Package outline
2.0, 2011-03-01