BFS17,235 NXP Semiconductors, BFS17,235 Datasheet - Page 3

• Manufacturer Part Number: BFS17,235
• Description: TRANS NPN 15V 25MA 1GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
September 1995
R
I
h
f
C
C
C
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
NPN 1 GHz wideband transistor
th j-s
c
e
re
s
is the temperature at the soldering point of the collector pin.
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
f = 500 MHz
E
C
C
C
C
E
C
C
C
= 0; V
= i
= 2 mA; V
= 25 mA; V
= 2 mA; V
= 25 mA; V
= i
= 1 mA; V
= 2 mA; V
e
c
= 0; V
= 0; V
CB
= 10 V
CONDITIONS
3
CB
EB
CE
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 1 V
= 5 V; f = 500 MHz
= 5 V; f = 1 MHz
= 5 V; R
= 1 V
= 5 V; f = 500 MHz
up to T
S
= 50 ;
CONDITIONS
s
= 70 C; note 1

25
25






MIN.

90
90
1
1.6
0.8

0.65
4.5
TYP.
VALUE
260
Product specification
10




1.5
2


MAX.
BFS17
UNIT
K/W
nA
GHz
GHz
pF
pF
pF
dB
UNIT