BFS17W,135 NXP Semiconductors, BFS17W,135 Datasheet - Page 4

• Manufacturer Part Number: BFS17W,135
• Description: TRANS NPN 15V 50MA 1GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS17W,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.6GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1995 Sep 04
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
I
V
B
CE
(pF)
= i
C re
(dB)
Fig.4
F
= 10 V.
Fig.6
b
1.5
0.5
20
15
10
= 0; f = 1 MHz.
2
1
0
5
0
10
0
−3
Feedback capacitance as a function of
collector-base voltage; typical values.
Minimum noise figure as function of
frequency; typical values.
10
−2
2
10
−1
4
1
6
10
8
10
V CB (V)
f (MHz)
2
MBG240
MBG238
10
10
3
4
handbook, halfpage
T
(GHz)
amb
f T
2.5
= 25 C; f = 500 MHz.
1.5
Fig.5
2
1
1
Transition frequency as a function
of collector current; typical values.
10
Product specification
I C (mA)
V CE = 10 V
5 V
BFS17W
MBG239
10
2