QSD2030 Fairchild Semiconductor, QSD2030 Datasheet
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Manufacturer Part Number
QSD2030
Description
Photodiodes T-1 3- 4 SENSOR
Manufacturer
Fairchild Semiconductor
Type
Plastic Silicon PIN Photodioder
Specifications of QSD2030
Lens Type
Clear Epoxy
Photodiode Material
Silicon
Peak Wavelength
880 nm
Half Intensity Angle Degrees
20 deg
Maximum Reverse Voltage
50 V
Maximum Power Dissipation
100 mW
Maximum Light Current
25 uA
Maximum Dark Current
10 nA
Maximum Rise Time
5 ns
Maximum Fall Time
5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Forward Voltage
1.3V
Dark Current (max)
10nA
Power Dissipation
100mW
Light Current
25uA
Rise Time
5ns
Fall Time
5ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
©2005 Fairchild Semiconductor Corporation
QSD2030 Rev. 1.1.0
QSD2030
Plastic Silicon Photodiode
Features
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
PIN photodiode
Package type: T-1 3/4 (5mm lens diameter)
Wide reception angle, 40°
Package material and color: clear epoxy
REFERENCE
SURFACE
0.020 (0.51)
SQ. (2X)
0.800 (20.3)
0.050 (1.25)
MIN
0.195 (4.95)
0.100 (2.54)
0.305 (7.75)
0.040 (1.02)
NOM
0.240 (6.10)
0.215 (5.45)
NOM
CATHODE
High sensitivity
Peak sensitivity
Radiant sensitive area: 1mm x 1mm
Schematic
= 880nm
CATHODE
ANODE
January 2008
www.fairchildsemi.com
Related parts for QSD2030
QSD2030 Summary of contents
... SQ. (2X) Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.0 High sensitivity Peak sensitivity Radiant sensitive area: 1mm x 1mm 0.305 (7.75) 0.040 (1.02) NOM CATHODE 0 ...
... Reception Angle V Forward Voltage F I Reverse Dark Current D I Reverse Light Current L C Capacitance t Rise Time r t Fall Time f ©2005 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) (1) (T =25°C) A Test Conditions I = 80mA 10V 0.5mW/cm ...
... Ee–Emitter output power (mw/cm Figure 3. Capacitance vs. Reverse Voltage Vr–Reverse Voltage (V) ©2005 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.0 1.0 0.9 0.8 0.7 0.5 0.6 0.7 0.8 0 1.3 T 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ...
... Datasheet Identification Product Status Advance Information Form Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.0 PDP-SPM™ FPS™ ® Power220 FRFET SM Power247 Global Power Resource POWEREDGE Green FPS™ Power-SPM™ ...
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