NTE555 NTE ELECTRONICS, NTE555 Datasheet
NTE555
Manufacturer Part Number
NTE555
Description
PIN Diode
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE555.pdf
(2 pages)
Description:
The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily
adaptable to may other fast switching RF and digital applications.
Features:
D Schottky Barrier Construction Provides Stable Characteristics by Eliminating
D Very Low Capacitance: 1.0pF
D Extremely Low Minority Carrier Lifetime: 100ps (Max)
D High Reverse Voltage: V
D Low Reverse Leakage Current: I
Absolute Maximum Ratings: (T
Reverse Voltage, V
Forward Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Reverse Breakdown Voltage
Diode Capacitance
Minority Carrier Lifetime
Reverse Leakage Current
Forward Voltage
Case Capactiance
the “Cat–Whisker” or “S–Bend” Contact
Derate Above 25 C
Parameter
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
A
= 50V
stg
A
= 25 C), P
= +25 C, unless otherwise indicated)
J
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +125 C, unless otherwise indicated)
UHF/VHF Detector
R
(BR)R
Silicon Pin Diode
C
C
V
I
r
R
F
C
= 200nA (Max)
T
F
J
NTE555
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
I
V
I
f = 1MHz
R
F
F
R
R
= 5mA, Krakauer Method
= 10mA
= 10 A
= 20V, f = 1MHz
= 25V
Test Conditions
Min
50
–
–
–
–
–
0.48
Typ
1.0
0.1
15
–
7
–55 to +125 C
–65 to +150 C
Max Unit
100
200
1.0
1.2
–
–
4mW/ C
400mW
pF
nA
pF
ps
V
V
50V
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NTE555 Summary of contents
Page 1
... Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact D Very Low Capacitance: 1.0pF ...
Page 2
Max .027 (0.68) Max Cathode .103 (2.6) Max .502 (12.76) Max .035 (0.88) Max .061 (1.54) Max Anode .125 (3.17) Max .055 (1.4) Max .041 (1.04) Max .085 (2.15) Max .170 (4.31) Max ...