BAV70 Infineon Technologies, BAV70 Datasheet - Page 3

• Manufacturer Part Number: BAV70
• Description: Diode
• Manufacturer: Infineon Technologies

Specifications of BAV70

• Forward Current If Max: 200mA
• Power Dissipation Pd: 250mW
• Termination Type: SMD
• Breakdown Voltage Vbr: 70V
• Current, Ifs Max: 4.5A
• Forward Voltage At If: 1V
• Power (ptot): 250mW
• Time, Trr Max: 6ns
• Breakdown Voltage: 70V
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Package / Case: SOT-23
• Diode Type: Small Signal
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 70V
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4.5A
• Diode Case Style: SOT-23
• Packages: SOT23
• Configuration: Dual
• Vr (max): 80.0 V
• If (max): 200.0 mA
• Ir (max): 150.0 nA
• Trr (max): 4.0 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
Forward voltage
I
I
I
I
I
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
(BR)
F
F
F
F
F
F
R
R
R
R
L
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 10 mA, I
= 70 V
= 25 V, T
= 70 V, T
= 100 Ω
= 0 V, f = 1 MHz
= 100 µA
A
A
R
= 150 °C
= 150 °C
= 10 mA, measured at I
Ι
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50Ω, t
3
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
R
p
i
min.
= 100ns, D = 0.05, t
= 50Ω
85
-
-
-
-
-
-
-
-
-
-
r
= 0.35ns, C = 0.05pF
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
1000
1200
1250
0.15
715
855
30
50
1.5
-
4
2006-01-17
BAV70...
r
= 0.6ns,
Unit
V
µA
mV
pF
ns