BAS21 T/R NXP Semiconductors, BAS21 T/R Datasheet - Page 4

• Manufacturer Part Number: BAS21 T/R
• Description: SMALL SIGNAL DIODE, 250V 200mA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS21 T/R

• Diode Type: Small Signal
• Repetitive Reverse Voltage Vrrm Max: 250V
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 9A
• Diode Case Style: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
General purpose diodes
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
BAS19
BAS20
BAS21
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
I
I
V
V
V
V
V
V
= 30 mA; R
= 3 mA; see Fig.8
F
F
R
R
R
R
R
R
= 100 mA
= 200 mA
= 100 V
= 100 V; T
= 150 V
= 150 V; T
= 200 V
= 200 V; T
note 1
4
R
L
= 0; see Fig.6
= 100 Ω; measured at
CONDITIONS
j
j
j
= 150 °C
= 150 °C
= 150 °C
CONDITIONS
F
= 30 mA to
BAS19; BAS20; BAS21
1
1.25
100
100
100
100
100
100
5
50
VALUE
MAX.
Product data sheet
330
500
V
V
nA
µA
nA
µA
nA
µA
pF
ns
UNIT
UNIT
K/W
K/W