BLF573 NXP Semiconductors, BLF573 Datasheet

LDMOS,RF,300W,HF-500MHZ,50V

BLF573

Manufacturer Part Number
BLF573
Description
LDMOS,RF,300W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF573

Drain Source Voltage Vds
50V
Continuous Drain Current Id
42A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF573
Manufacturer:
MICROCHIP
Quantity:
4 500
Part Number:
BLF573,112
Manufacturer:
MINI
Quantity:
1 400
Part Number:
BLF573S
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF573S
Manufacturer:
M/A-COM
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1.
Mode of operation
CW
BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 — 8 July 2010
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF and VHF band)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
Dq
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
of 900 mA:
Average output power = 300 W
Power gain = 27.2 dB
Efficiency = 70 %
Production test information
f
(MHz)
225
V
(V)
50
DS
P
(W)
300
L
G
(dB)
27.2
p
Product data sheet
η
(%)
70
D

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BLF573 Summary of contents

Page 1

... BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Mode of operation CW CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... Thermal characteristics Parameter Conditions thermal resistance from T case junction to case is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor Simplified outline Graphic symbol [1] 2 Min - − ...

Page 3

... V feedback capacitance input capacitance output capacitance RF characteristics power gain input return loss drain efficiency All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor Conditions Min = 3.75 mA 110 375 mA 1 ...

Page 4

... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA Application information 7.1 Impedance information Table 8. Measured Z f MHz 225 Fig 2. BLF573_BLF573S Product data sheet ...

Page 5

... BLF573 and BLF573S electromigration (I All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor (2) (3) (4) (5) (6) (8) (9) (10) (11) 12 ...

Page 6

... P (W) L (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor (7) (6) (5) (1) (2) (3) (4) 100 200 300 225 MHz 500 mA Dq ...

Page 7

... Fig 6. Load power as function of input power; typical values BLF573_BLF573S Product data sheet (dBm) Ideal ( All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor 001aaj614 ( (dBm) i © NXP B.V. 2010. All rights reserved ...

Page 8

... F/m; height = 0.79 mm; Cu (top/bottom metallization); r Value 100 Ω; 100 MHz 100 180 pF 220 4.7 μ All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor 0 IMD3 (dBc) −20 −40 (1) (2) (3) (8) (4) −60 (7) (5) (6) − ...

Page 9

... V DD C19 C20 All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor Remarks [1] [1] [1] (L × × × × × W) 105 mm × × × × × C13 C14 C16 C10 C11 C12 ...

Page 10

... Product data sheet B1 C9 C20 C10 All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor C19 C13 C14 L2 C17 C11 C12 C16 C15 © NXP B.V. 2010. All rights reserved. C18 001aaj149 ...

Page 11

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor 3.38 1.70 34 ...

Page 12

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 ...

Page 13

... Data sheet status Product data sheet • The document now describes both the eared and earless version of this product: BLF573 and BLF573S respectively. Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573 ...

Page 14

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 15

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 BLF573; BLF573S HF / VHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 16

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF573_BLF573S All rights reserved. Date of release: 8 July 2010 ...

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