BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 4

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-6G_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 8.
The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
P
f
GHz
2.7
2.8
2.9
3.0
3.1
Fig 1.
L
= 6 W; t
Definition of transistor impedance
Typical impedance
p
= 100 s;
Rev. 01 — 19 February 2009
= 10 %.
Z
2.44
2.99
3.94
5.44
6.89
S
gate
j17.78
j16.04
j14.56
j13.75
j14.58
Z
S
001aaf059
LDMOS S-Band radar power transistor
Z
drain
L
BLS6G2731-6G
Z
3.30
4.52
5.67
4.94
3.00
L
DS
j4.14
j3.72
j4.67
j6.39
j6.56
= 32 V; I
© NXP B.V. 2009. All rights reserved.
Dq
= 25 mA;
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