FP35R12W2T4 Infineon Technologies, FP35R12W2T4 Datasheet - Page 7

• Manufacturer Part Number: FP35R12W2T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP35R12W2T4

• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 215W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-EASY2B-1
• Ic (max): 35.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPIM™ 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
70
65
60
55
50
45
40
35
30
25
20
15
10
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0,0
5
0,5
6
1,0
7
1,5
8
2,0
9
FP35R12W2T4
2,5
10
3,0
11
3,5
12
4,0
13
7
10,0
9,0
8,0
7,0
6,0
5,0
4,0
3,0
2,0
1,0
0,0
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0,0
0
10
1,0
20
2,0
30
Vorläufige Daten
preliminary data
40
3,0
50
4,0
60
5,0
70