SI7898DP Vishay, SI7898DP Datasheet - Page 3

• Manufacturer Part Number: SI7898DP
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI7898DP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 85mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71873
S09-0227-Rev. D, 09-Feb-09
0.15
0.12
0.09
0.06
0.03
0.00
50
10
20
16
12
1
8
4
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 3.5 A
0.2
On-Resistance vs. Drain Current
= 75 V
V
5
6
SD
Q
g
- Source-to-Drain Voltage (V)
T
0.4
V
I
D
J
- Total Gate Charge (nC)
GS
Gate Charge
= 150 °C
- Drain Current (A)
10
= 6 V
12
0.6
15
18
0.8
V
T
GS
J
20
24
= 25 °C
= 10 V
1.0
1.2
25
30
1200
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
3.0
2.5
2.0
1.5
1.0
0.5
0 .0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-
GS
25
= 3.5 A
C
= 10 V
rss
30
2
V
T
V
0
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
60
4
C
50
C
Vishay Siliconix
oss
iss
I
90
6
D
75
= 3.5 A
Si7898DP
www.vishay.com
100
120
8
125
150
150
10
3