BUK652R3-40C NXP Semiconductors, BUK652R3-40C Datasheet
BUK652R3-40C
Specifications of BUK652R3-40C
Related parts for BUK652R3-40C
BUK652R3-40C Summary of contents
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... BUK652R3-40C N-channel TrenchMOS intermediate level FET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C Min Max - 40 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 1006 - 306 -55 175 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK652R3-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C Min Typ Max - - 0. 003aae269 t p δ = ...
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... Ω R G(ext) from drain lead 6 mm from package to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... GS j see Figure /dt = -100 A/µ 003aae251 60 80 100 I (A) D Fig 6. 003aae282 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C N-channel TrenchMOS intermediate level FET Min Typ - 0 127 100 3 ( 0.2 0.4 0.6 Output characteristics: drain current as a function of drain-source voltage ...
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... I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C N-channel TrenchMOS intermediate level FET 4 V GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA junction temperature 2 ...
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... Fig 14. Gate-source voltage as a function of gate 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C N-channel TrenchMOS intermediate level FET 10 GS (V) 8 14V 100 200 charge; typical values 003aae255 = 25 ° ...
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... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK652R3-40C Product data sheet N-channel TrenchMOS intermediate level FET (pF All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C 003aae252 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK652R3-40C v.2 20100818 • Modifications: Status changed from objective to product. BUK652R3-40C v.1 20100520 BUK652R3-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 BUK652R3-40C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: BUK652R3-40C ...