BUK654R8-40C NXP Semiconductors, BUK654R8-40C Datasheet - Page 4

MOSFET,N CH,40V,88A,SOT78

BUK654R8-40C

Manufacturer Part Number
BUK654R8-40C
Description
MOSFET,N CH,40V,88A,SOT78
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK654R8-40C

Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.84mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
BUK654R8-40C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
10
D
D
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aad074
mb
1
DS
(°C)
/ I
D
Rev. 03 — 12 October 2010
200
Fig 2.
DC
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK654R8-40C
100
V
DS
(V)
150
t
100 μ s
1 ms
10 ms
100 ms
© NXP B.V. 2010. All rights reserved.
p
T
=10 μ s
003aae316
mb
03na19
(°C)
10
200
2
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