PSMN034-100PS NXP Semiconductors, PSMN034-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN034-100PS
• Description: MOSFET,N CH,100V,32A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 29.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN034-100PS_2
Objective data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R DSon
(S)
g fs
100
50
40
30
20
10
80
60
40
20
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
5
…continued
20
10
Conditions
I
I
V
S
S
DS
30
15
= 15 A; V
= 5 A; dI
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= 50 V
V GS (V)
003aae110
003aae111
I D (A)
S
GS
40
20
/dt = 100 A/µs; V
Rev. 02 — 1 March 2010
= 0 V; T
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
j
= 25 °C; see
Fig 6.
Fig 8.
GS
(pF)
C
2000
1500
1000
(A)
I
500
= 0 V;
D
40
30
20
10
0
0
gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse capacitances as a function of
Output characteristics: drain current as a
0
0
Figure 17
10.0
6.5
1
5.5
PSMN034-100PS
5.0
4
2
Min
-
-
-
3
Typ
0.85
38
59
8
V
GS
© NXP B.V. 2010. All rights reserved.
V GS (V)
C
C
4
003aae109
003aae106
iss
rss
(V) =
V DS (V)
Max
1.2
-
-
4.7
4.5
4
12
5
Unit
V
ns
nC
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