PSMN035-100LS NXP Semiconductors, PSMN035-100LS Datasheet - Page 8

• Manufacturer Part Number: PSMN035-100LS
• Description: MOSFET,N CH,100V,27A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
gate-source voltage
of drain current; typical values
0
0
V
GS
10
2
(V) = 4.5
min
typ
20
4
max
V
I
All information provided in this document is subject to legal disclaimers.
4.7
GS
D
003aae358
(A)
003aae487
(V)
10
5
6
30
Rev. 2 — 18 August 2010
6
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
3.2
2.4
1.6
0.8
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
PSMN035-100LS
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aae372
003aaa508
T
j
(°C)
180
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