SI4431DY-T1 Vishay, SI4431DY-T1 Datasheet
SI4431DY-T1
Specifications of SI4431DY-T1
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SI4431DY-T1 Summary of contents
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... V GS –30 30 0.070 @ V = –4 SO Top View Ordering Information: Si4431DY-T1 Si4431DY-T1—E3 (Lead (Pb)-Free) Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single-Pulse Avalanche Energy a a Maximum Power Dissipation ...
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... Si4431DY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge ...
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... Total Gate Charge (nC) g Document Number: 70151 S-51455—Rev. D, 01-Aug- 2000 1600 1200 800 400 2.0 1.6 1.2 0.8 0.4 0 Si4431DY Vishay Siliconix Transfer Characteristics 25_C T = –55_C C 125_C – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si4431DY Vishay Siliconix Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0.8 = 250 0.6 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...