NTE5504 NTE ELECTRONICS, NTE5504 Datasheet - Page 2

• Manufacturer Part Number: NTE5504
• Description: SCR THYRISTOR, 25A, 200V, TO-48
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5504

• Peak Repetitive Off-state Voltage, Vdrm: 200V
• Gate Trigger Current Max, Igt: 25mA
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 200A
• Holding Current Max Ih: 20mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Peak Gate Power − Forward, P
Average Gate Power − Forward, P
Peak Gate Current − Forward, I
Peak Gate Voltage − Forward, V
Peak Gate Voltage − Reverse, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Stud Torque
Electrical Characteristics: (T
Peak Forward or Reverse Blocking Current
Gate Trigge Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Holding Current
Forward ON Voltage
Turn−On Time
Turn−Off Time
Forward Voltage Application Rate
Thermal Resistance, Junction to Case
NTE5507
NTE5508
NTE5509
NTE5500 thru NTE5506
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
stg
C
GM
GM
GFM
GRM
= +25°C unless otherwise specified)
(14.28)
(30.33)
G(AV)
Gate
1.193
(11.5)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.562
Max
Max
.453
Max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM,
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
R
dv/dt
HOLD
V
V
I
t
GT
ΘJC
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
TM
gt
q
I
RRM
J
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
Anode Voltage = 7V, R
Anode Voltage = 7V, R
Anode Voltage = 7V, Gate Open
I
I
T
dv/dt = 30V/μs Min,
V
T
T
T
J
J
J
DRM
= 20A
= 10A, I
= +125°C
= +125°C, I
= +125°C, Gate Open
= Rated Voltage
Test Conditions
G
= 100mA
1/4−28 UNF−2A
Cathode
T
Anode
.200 (5.08) Max
= 10A, I
L
L
R
= 50Ω
= 50Ω
= 10A,
0.25
Min
−
−
−
−
−
−
−
−
−
−
−
30 in. lb. (3.33 mN)
Typ
1.1
1.0
1.0
10
20
30
30
−
−
−
−
−
−65° to +125°C
−65° to +150°C
Max
3.0
1.5
2.0
10
25
8
6
4
−
−
−
−
500mW
°C/W
Unit
V/μs
mA
mA
mA
mA
mA
mA
μs
μs
V
V
10V
5W
2A
5V