S2S1RP Littelfuse Inc, S2S1RP Datasheet - Page 5

• Manufacturer Part Number: S2S1RP
• Description: SCR THYRISTOR, 510mA, 200V, DO-214
• Manufacturer: Littelfuse Inc

Specifications of S2S1RP

• Peak Repetitive Off-state Voltage, Vdrm: 200V
• Gate Trigger Current Max, Igt: 0.012mA
• Current It Av: 510mA
• On State Rms Current It(rms): 800mA
• Peak Non Rep Surge Current Itsm 50hz: 16A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Sheets
Electrical Specifications Notes
(1) See Figure E5.1 through Figure E5.9 for current ratings at
(2) See Figure E5.10 for I
(3) See Figure E5.11 for instantaneous on-state current (i
(4) See Figure E5.12 for V
(5) See Figure E5.13 for I
(6) For more than one full cycle, see Figure E5.14.
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-
(8) See Figure E5.15 for t
(9) Test conditions as follows:
©2004 Littelfuse, Inc.
Thyristor Product Catalog
-40 °C
T
C
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
specified operating temperatures.
state voltage (v
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 µs minimum,
15 µs maximum. See Figure E5.20 and Figure E5.21.
– T
– Rate-of-rise of current ≤10 A/µs
– Rate-of-reversal of current ≤5 A/µs
– I
– V
– V
– Rate-of-rise reapplied forward blocking voltage = 5 V/µs
– Gate Bias = 0 V, 100 Ω (during turn-off time interval)
=
TM
C
RRM
R
(4) (12) (22)
or T
= 15 V minimum, V
= 1 A (50 µs pulse), Repetition Rate = 60 pps
25 °C
Volts
MAX
= Rated
V
T
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
C
L
GT
≤80 °C, rectangular current waveform
=
T
110 °C
) TYP.
T
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
C
=
GT
H
gt
GT
versus T
versus I
DRM
versus T
mAmps
(5) (19)
versus T
MAX
I
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
H
= Rated
GT
C
C
C
or T
.
or T
or T
Amps
I
(17)
GM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
L
L
.
.
L
.
V
Volts
MIN
GRM
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
T
) versus on-
Watts
P
(17)
GM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
E5 - 5
P
Watts
G(AV)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(10) Test condition is maximum rated RMS current except TO-92
(11) See package outlines for lead form configurations. When ordering
(12) V
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
(14) I
(15) I
(16) I
(17) Pulse Width ≤10 µs
(18) I
(19) Latching current can be higher than 20 mA for higher I
(20) T
(21) I
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) T
60/50 Hz
(6) (13)
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
devices are 1.2 A
special lead forming, add type number as suffix to part number.
for measuring gate trigger voltage and gate trigger current.)
temperature at maximum rated current.
2N6565 Series devices
2N6565 Series devices
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
125 °C
Amps
GT
H
H
GT
DRM
I
TSM
C
C
D
= 10 mA maximum at T
= 6 mA maximum at T
or T
= 110 °C
= 6 V dc, R
= 500 µA maximum at T
= 350 µA maximum at T
and I
L
= T
T
RRM
Volts/µSec
C
dv/dt
J
= 110 °C
TYP
for test conditions in off state
10
10
10
10
10
10
8
8
8
8
8
8
8
8
8
8
8
8
= 50 µA for 2N5064 and 100 µA for 2N6565 at
L
= 100 Ω (See Figure E5.19 for simple test circuit
PK
; T106/T107 devices are 4 A
Amps/µSec
C
C
di/dt
= -40 °C for T106 devices
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
C
= -65 °C for 2N5064 Series and
C
= -40 °C for T106 devices
= -65 °C for 2N5064 Series and
µSec
TYP
t
(8)
4
4
4
5
5
5
gt
4
4
4
5
5
5
4
4
4
5
5
5
http://www.littelfuse.com
µSec
MAX
(9)
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
t
PK
q
[phone]
Sensitive SCRs
.
GT
Amps
types.
l
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
2
t
2
Sec