NTE61 NTE ELECTRONICS, NTE61 Datasheet
NTE61
Manufacturer Part Number
NTE61
Description
BIPOLAR TRANSISTOR, PNP, -140V TO-3
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE60.pdf
(2 pages)
Specifications of NTE61
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-140V
Transition Frequency Typ Ft
2MHz
Power Dissipation Pd
200W
Dc Collector Current
17A
Dc Current Gain Hfe
25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 250W @ 50V
D For Low Distortion Complementary Designs
D High DC Current Gain: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Continuous Emitter Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), T
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
mentary pairs have their gain specification (h
Parameter
High Power Audio, Disk Head Positioner
Silicon Complementary Transistors
EBO
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
= +25 C), P
CEO(sus)
NTE60 (NPN) & NTE61 (PNP)
FE
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
= 25 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
for Linear Applications
= +25 C unless otherwise specified)
CEO(sus)
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
CEX
CEO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
CE
J
CE
CE
EB
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 140V, V
= 5V, I
= 140V, V
= 140V, I
= 5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
= 0
B
B
BE(off)
BE(off)
FE
= 0, Note 2
= 0
) matched to within 10% of each other.
= 1.5V, T
= 1.5V
C
= +150 C
L
. . . . . . . . . . . . . . . .
Min
140
–
–
–
–
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
Max
100
250
100
1.43W/ C
0.70 C/W
–
2
+265 C
250W
140V
140V
Unit
mA
20A
25A
V
A
A
A
5V
5A
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NTE61 Summary of contents
Page 1
... Silicon Complementary Transistors High Power Audio, Disk Head Positioner Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter On Voltage Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance .350 (8.89) .312 (7.93) Min Emitter .215 ...