2N7000 NTE ELECTRONICS, 2N7000 Datasheet - Page 2

• Manufacturer Part Number: 2N7000
• Description: T-MOSFET N CHAN ENHAN
• Manufacturer: NTE ELECTRONICS

Specifications of 2N7000

• Rohs Compliant: YES

2005. 10. 27
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note2)
(Note 2)
DYNAMIC CHARACTERISTICS
Gate Threshold Voltage
Drain-Source ON Resistance
Drain-Source ON Voltage
On State Drain Current
Forward Transconductance
Drain-Source Diode Forward Voltage
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
SWITCHING TIME TEST CIRCUIT
Pulse Test : Pulse Width 80 , Duty Cycle 1%
CHARACTERISTIC
CHARACTERISTIC
V
GS
Turn-On Time
Turn-Off Time
V
IN
Revision No : 1
G
D
V
SYMBOL
SYMBOL
DD
R
V
R
I
S
DS(ON)
DS(ON)
D(ON)
V
C
C
V
g
C
t
L
t
off
on
FS
SD
oss
iss
rss
th
DUT
V
OUT
V
V
V
V
V
V
V
V
V
V
V
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
2N7000
=V
=10V, I
=5V, I
=10V, I
=5V, I
=10V, V
=10V, I
=0V, I
=25V, V
=10V
=30V, R
GS
TEST CONDITION
, I
TEST CONDITION
D
D
S
D
=200mA (Note1)
D
=50mA
D
=50mA
D
=250 A
DS
GS
=500mA
=500mA
=500mA
L
=155 , I
= 2 V
=0V, f=1MHz
OUTPUT, V
INPUT, V
DS(ON)
D
=190mA,
t
d(on)
IN
OUT
10%
t
on
50%
10%
MIN.
MIN.
PULSE WIDTH
500
200
1.1
t
90%
r
-
-
-
-
-
-
-
-
-
-
t
d(off)
0.075
TYP.
TYP.
0.78
47.1
14.8
580
1.8
1.2
1.5
0.6
3.5
8.8
8.8
-
50%
10%
t
90%
off
MAX.
MAX.
0.105
90%
1.15
2.3
1.8
2.1
0.9
-
-
t
-
-
-
-
-
INVERTED
f
UNIT
UNIT
mA
mS
pF
nS
V
V
V
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