2N3704 MULTICOMP, 2N3704 Datasheet

BIPOLAR TRANSISTOR, NPN, 30V, TO-92

2N3704

Manufacturer Part Number
2N3704
Description
BIPOLAR TRANSISTOR, NPN, 30V, TO-92
Manufacturer
MULTICOMP
Datasheet

Specifications of 2N3704

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
30V
Transition Frequency Typ Ft
100MHz
Power Dissipation Pd
625mW
Dc Collector Current
800mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
• Sourced from Process 10.
• See PN100 for characteristics.
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse
Thermal Characteristics
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
C
f
P
R
R
C
CBO
EBO
T
switches requiring collector currents to 300mA.
FE
J
Symbol
CEO
CBO
EBO
CE
BE
D
ob
Symbol
, T
JC
JA
(BR)CEO
(BR)CBO
(BR)EBO
Symbol
(sat)
(on)
ST
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
300 s, Duty Cycle
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
2.0%
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
- Continuous
=25 C unless otherwise noted
2N3704
I
I
V
I
V
V
I
V
V
I
C
C
E
C
C
CB
EB
CE
CE
CB
= 100mA, I
= 10mA, I
= 100 A, I
= 100 A, I
= 50mA, V
= 5.0V, I
= 2.0V, I
= 20V, I
= 3.0V, I
= 10V, f = 1.0MHz
Test Condition
B
E
C
C
E
C
C
B
CE
= 0
= 0
= 50mA
= 100mA
= 0
= 5.0mA
= 0
= 0
= 2.0V
Max.
83.3
625
200
5.0
1. Emitter 2. Collector 3. Base
1
Min.
100
100
5.0
0.5
30
50
-55 ~ +150
Value
500
5.0
30
50
Typ.
TO-92
Max.
100
100
300
mW/ C
1.0
0.6
12
Units
mW
C/W
C/W
Units
mA
V
V
V
Rev. B, July 2002
C
Units
MHz
nA
nA
pF
V
V
V
V
V

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2N3704 Summary of contents

Page 1

... Pulse Test: Pulse 300 s, Duty Cycle 2.0% Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation 2N3704 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 10mA ...

Page 2

Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, July 2002 ...

Page 3

CROSSVOLT â â â â Rev. I ...

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