AT-42085G Avago Technologies US Inc., AT-42085G Datasheet - Page 3

• Manufacturer Part Number: AT-42085G
• Description: RF TRANSISTOR, NPN, 12V, 8GHZ 85 PLASTIC
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42085G

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 2dB ~ 3.5dB @ 2GHz ~ 4GHz
• Gain: 9.5dB ~ 13.5dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (85 Plastic)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1859; AT-42085G

AT-42085 Typical Performance, T
3
Figure 1. Insertion Power Gain vs. Collector Current
and Frequency. V
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
V
CE
20
16
12
40
35
30
25
20
15
10
= 8 V, I
8
4
0
5
0
0
C
= 35 mA.
0.1
10
CE
FREQUENCY (GHz)
= 8 V.
20
0.3
I
C
0.5
(mA)
MSG
30
|S
21E
1.0
|
40
2
4.0 GHz
MAG
1.0 GHz
2.0 GHz
50
3.0
A
= 25°C
6.0
Figure 5. Noise Figure and Associated Gain vs.
Frequency. V
Figure 2. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. V
24
21
18
15
12
24
20
16
12
9
6
3
0
8
4
0.5
0
G
P
G
1dB
1dB
A
10
CE
= 8 V, I
FREQUENCY (GHz)
1.0
20
C
= 10 mA.
I
C
(mA)
30
2.0
40
CE
= 8 V.
NF
3.0 4.0 5.0
O
2.0 GHz
4.0 GHz
4.0 GHz
50
2.0 GHz
4
3
2
1
0
Figure 3. Output Power and 1 dB Compressed Gain vs.
Collector Current and Voltage. f = 2.0 GHz.
24
20
16
12
16
14
12
10
0
G
P
1dB
1dB
10
20
I
C
(mA)
30
40
50
10 V
10 V
6 V
4 V
6 V
4 V