AT-41535G Avago Technologies US Inc., AT-41535G Datasheet - Page 3

• Manufacturer Part Number: AT-41535G
• Description: RF TRANSISTOR, NPN, 12V, 8GHZ 35 MICRO-X
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41535G

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 60mA
• Dc Current Gain Hfe: 180
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves at Tc = +25°C
Figure 1. Noise Figure and Associated Gain vs. Frequency.
Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Col-
lector Voltage. F = 2.0GHz.
Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain
vs. Frequency. Vce = 8V, Ic = 25mA
16
15
14
13
12
11
10
24
21
18
15
12
40
35
30
25
20
15
10
9
8
7
9
6
3
0
5
0
0
0.1
0
Ga
NFo
10
1
Frequency (GHz)
20
2
Frequency (GHz)
NF
MSG
Ic (mA)
50Ω
Ga
|S
21E
1
30
3
|
2
NFo
MAG
4
40
Vce = 8V, Ic = 10mA
10V
4V
6V
10V
6V
4V
5
50
16
14
12
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
10
Figure 2. Output Power and 1dB Compression Gain vs. Collector Current and Fre-
quency. Vce = 8V.
Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Fre-
quency. Vce = 8V.
Figure 6. Insertion Power Gain vs. Collector Current and Frequency. Vce = 8V.
16
14
12
10
24
20
16
12
20
18
16
14
12
10
8
6
4
2
0
8
4
8
6
4
2
0
0
0
G1dB
P1dB
Ga
NFo
10
10
10
20
20
20
Ic (mA)
Ic (mA)
Ic (mA)
30
30
30
40
2.0GHz
4.0GHz
4.0GHz
2.0GHz
40
40
4.0GHz
4.0GHz
2.0GHz
2.0GHz
1.0 GHz
2.0 GHz
4.0 GHz
50
16
14
12
10
8
6
4
2
0
50
50