BTA316-800ET NXP Semiconductors, BTA316-800ET Datasheet - Page 3

• Manufacturer Part Number: BTA316-800ET
• Description: TRIAC,600V,3 QUADRANT,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BTA316-800ET

• Peak Repetitive Off-state Voltage, Vdrm: 800V
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 150A
• Holding Current Max Ih: 15mA
• Gate Trigger Voltage Max Vgt: 1.5V
• Peak Gate: RoHS Compliant

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA316-800ET
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
20
16
12
8
4
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aab777
mb
( C)
Rev. 02 — 1 December 2010
150
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
over any 20 ms period
p
p
p
T
= 20 ms; see
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
Figure
G
3; see
= 0.2 A; dI
Fig 2.
Figure
mb
j(init)
j(init)
I
T(RMS)
(A)
Figure
≤ 126 °C;
60
50
40
30
20
10
= 25 °C;
= 25 °C;
0
10
duration; maximum values
RMS on-state current as a function of surge
4; see
G
2
/dt = 0.2 A/µs
1; see
Figure 5
Figure 2
10
1
BTA316-800ET
1
surge duration (s)
Min
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
003aaf674
100
150
Max
800
16
140
150
98
2
5
0.5
150
10
Unit
V
A
A
A
A
A/µs
A
W
W
°C
°C
3 of 14
2
s