2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 8

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2MBI150U4B-120-50

Manufacturer Part Number
2MBI150U4B-120-50
Description
DUAL IGBT MODULE 150A 1200V TRENCH
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI150U4B-120-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
780W
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150U4B-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
Company:
Part Number:
2MBI150U4B-120-50
Quantity:
350
Test
cate-
gories
1 High temperature
2 High temperature
3 Temperature
4 Intermitted
Electrical
Visual
Note : Each parameter measurement read-outs shall be made after stabilizing the components
Humidity Bias
(Power cycle)
( for IGBT )
characteristic
inspection
Reverse Bias
Bias (for gate)
Operating Life
Test items
Item
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
shall be made wipe or dry completely before the measurement.
Each parameter measurement read-outs shall be made after stabilizing the components
Leakage current
Gate threshold voltage VGE(th)
Saturation voltage
Forward voltage
Thermal
Isolation voltage
Visual inspection
resistance
Peeling
Plating
and the others
Characteristic
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
IGBT
FWD
Test methods and conditions
Reliability Test Items
Failure Criteria
VCE(sat)
or
Symbol
±IGES
ICES
Viso
: Ta = 125±5 ℃
: VC = 0.8×VCES
: Applied DC voltage to C-E
: 1000hr.
: Ta = 125±5 ℃
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
: 1000hr.
: 85±2
: 85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
: 1000hr.
: 2 sec.
: 18 sec.
:
: 15000 cycles
VF
VGE
VF
-
VGE = 0V
VCE = 0V
VGE = 0V
Tj ≦ 150 ℃, Ta=25±5 ℃
VCE
(Tj ≦ 150 ℃)
(Tj ≦ 150 ℃)
Tj=100±5 deg
Lower limit Upper limit
o
C
LSL×0.8
The visual sample
Broken insulation
Failure criteria
-
-
-
-
-
-
MS5F6568
LSL : Lower specified limit.
USL : Upper specified limit.
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×2
USL×2
(Aug.-2001 edition)
Condition code C
Unit
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
mA
mA
mV
mV
V
V
-
-
A
Reference
norms
Note
Number
sample
of
5
5
5
5
H04-004-03a
8
Accept-
ance
number
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
14
a

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