2N6845 SEMELAB, 2N6845 Datasheet - Page 2

• Manufacturer Part Number: 2N6845
• Description: MOSFET, P, TO-39
• Manufacturer: SEMELAB

Specifications of 2N6845

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
BV
R
V
g
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I
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C
C
C
Q
Q
Q
t
t
t
t
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t
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Notes
1) Pulse Test: Pulse Width
DSS
GSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
fs
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
T
DSS
J
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
Parameter
Telephone [phone]. Fax [phone].
E-mail:
1
[e-mail]
300ms,
1
1
1
1
2%
V
Reference to 25°C
I
V
V
V
V
V
V
V
V
V
f = 1MHz
V
V
V
I
R
Mosfet symbol showing the
integral reverse p-n junction diode
I
V
I
d
Website:
D
D
S
F
i
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
GS
G
/ d
= -4.0A
= - 1mA
= - 4.0A
= - 4.0A
Test Conditions
(T amb = 25°C unless otherwise stated)
= 7.5
= V
= - 80V
= - 25V
= -50V
= 0
= - 10V
= - 10V
= 20V
= –20V
= 0
= -10V
= -50V
= 0V
t
-15V
-100A/ s V
GS
http://www.semelab.co.uk
I
I
I
I
I
V
T
I
T
T
D
D
D
D
D
D
J
J
J
GS
DD
= - 1mA
= - 2.6A
= - 4.0A
= -250 A
= -2.6A
= -4.0A
= 125°C
= 25°C
= 25°C
= 0
-50V
G
D
S
- 100
1.25
Min.
4.3
1.3
1.0
- 2
Negligible
- 0.10
Typ.
380
170
45
Document Number 5748
IRFF9120
Max.
-250
-100
- 4.0
- 4.8
0.60
0.69
16.3
- 16
2N6845
100
100
200
-25
4.7
9.0
3.1
- 4
60
50
70
Issue 1
V / °C
Unit
nC
nA
pF
ns
ns
V
V
S
A
V
A
C