BUL1102E STMicroelectronics, BUL1102E Datasheet - Page 2

• Manufacturer Part Number: BUL1102E
• Description: TRANSISTOR, NPN, TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL1102E

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 450V
• Power Dissipation Pd: 70W
• Dc Collector Current: 2A
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Alternate Case: RoHS Compliant
• Dc Current Gain Hfe: 35
• Rohs Compliant: Yes

BUL1102E
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
Safe Operating Areas
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
CEO(sus)
CE(sat)
BE(sat)
thj-case
h
I
I
E
CES
EBO
FE
t
t
s
f
ar
Thermal Resistance Junction-Case
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
Avalanche Energy
B
B
= 0)
= 0)
Parameter
BE
= 0)
V
V
I
I
I
I
I
I
I
T
L = 2 mH
I
(see figure 1)
C
C
C
C
C
C
B1
BR
P
CE
EB
= 100 mA
= 2 A
= 2 A
= 250 mA
= 2 A
= 2.5 A
= 30 s
= 0.5 A
= 12 V
= 1100 V
case
2.5A
= 25
Test Conditions
o
C unless otherwise specified)
I
25
B
I
V
C = 1.8 nF
V
B
V
I
(see figure 2)
CE
B2
= 400 mA
CE
CC
o
= 400 mA
C < T
Derating Curve
= 1 A
= 5 V
= 5 V
Max
= 250 V
C
<125
o
C
Min.
450
35
12
6
1.78
Typ.
Max.
100
300
1.5
1.5
2.5
70
20
1
o
Unit
mA
C/W
mJ
ns
V
V
V
A
s