1N914-TP Micro Commercial Components (MCC), 1N914-TP Datasheet - Page 2

200mA, 100V Switching Diode, DO-35 / 13" REEL

1N914-TP

Manufacturer Part Number
1N914-TP
Description
200mA, 100V Switching Diode, DO-35 / 13" REEL
Manufacturer
Micro Commercial Components (MCC)
Datasheets

Specifications of 1N914-TP

Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
200 mA
Recovery Time
4 ns
Maximum Reverse Leakage Current
25 nA
Maximum Power Dissipation
500 mW
Operating Temperature Range
- 55 C to + 125 C
Maximum Diode Capacitance
4 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Capacitance, Junction
4 pF
Current, Forward
200 mA
Current, Reverse
50 μA
Current, Surge
4 A
Package Type
DO-35
Power Dissipation
500 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
720 mV
Voltage, Reverse
100 V
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
RoHS Compliant part
Other names
1N914-TPTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N914-TP
Manufacturer:
MCC
Quantity:
20 000
Micro Commercial Components
0D[LPXP5DWLQJV
)HDWXUHV
Electrical Characteristics @ 25
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Note:
M C C
Maximum Repetitive
Reverse Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
Minimum Breakdown
Voltage
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B
Maximum Reverse
Current
Typical Junction
Capacitance
Reverse Recovery
Time
Compliant. See ordering information)
Marking : Cathode band and type number
Low Current Leakage
Compression Bond Construction
Low Cost
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Moisture Sensitivity: Level 1 per J-STD-020C
Operating Temperature: -55
Storage Temperature: -55
Maximum Thermal Resistance; 300
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
V
I
P
FSM
V
C
T
O
RRM
T
V
I
I
O
R
C to +150
R
rr
D
J
F
TM
J
O
C to +150
O
C Unless Otherwise Specified
500mW
200mA
720mV
150
5.0uA
4.0pF
4.0nS
100V
1.0A
4.0A
100V
25nA
50uA
O
1.0V
75V
O
C/W Junction To Ambient
C
O
O
C
C
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
I
I
T
I
I
I
I
V
V
V
Measured at 1.0MHz,
V
I
V
R
R
R
FM
FM
FM
FM
F
J
R
R
R
R
R
=10mA
=100uA,
=5.0uA
L
=20V, T
=75V, T
=20V, T
=0V
=100 Ù, I
= 25
= 6V
= 20mA;
= 100mA;
= 5.0mA;
= 10mA;
O
C
1 of 4
J
J
J
=25
=25
=150
rr
=1.0mA
O
O
C,
C,
O
C
DIM
C
D
A
B
Silicon Epitaxial
500mW 100 Volt
INCHES
1.000
MIN
1N914(A)(B)
---
---
---
D
D
A
Diodes
MAX
.166
.079
.020
---
DO-35
DIMENSIONS

25.40
C
MIN
---
---
---
B
MM
Cathode
Mark
MAX
2.00
.52
4.2
---
NOTE

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