AT-32011-TR1 Avago Technologies US Inc., AT-32011-TR1 Datasheet - Page 5

• Manufacturer Part Number: AT-32011-TR1
• Description: BJT (Bipolar Junction Transistor)
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-32011-TR1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Noise Figure (db Typ @ F): 1dB ~ 1.3dB @ 900MHz
• Gain: 12.5dB ~ 14dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 2mA, 2.7V
• Current - Collector (ic) (max): 32mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 516-1499-2

AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, I
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32033 Typical Scattering Parameters,
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, I
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32011 Typical Scattering Parameters,
Freq.
Freq.
GHz
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Freq.
Freq.
GHz
0.5
GHz
0.5
0.9
1.8
2.4
0.9
1.8
2.4
[1]
[1]
Mag
0.97
0.81
0.61
0.56
0.41
0.36
0.34
0.34
0.38
0.46
0.51
Mag
0.97
0.88
0.78
0.75
0.67
0.63
0.61
0.59
0.59
0.63
0.69
S
S
11
11
F
F
0.42
0.71
1.37
1.80
0.42
0.71
1.37
1.80
dB
dB
min
min
Ang
-136
-160
-177
Ang
154
119
-127
-144
-155
-175
-11
-52
-87
-95
157
120
-11
-52
-86
-94
81
56
94
11.09
-0.84
-1.90
11.09
10.13
9.88
8.07
7.65
5.43
4.30
3.74
2.49
0.96
-0.39
-2.39
8.67
8.35
6.35
5.25
4.75
3.48
1.77
C
C
dB
dB
Mag
Mag
0.79
0.70
0.53
0.55
0.87
0.73
0.42
0.50
= 1 mA
= 1 mA
Γ
Γ
Mag
3.58
3.12
2.53
2.41
1.87
1.64
1.54
1.33
1.12
0.91
0.80
Mag
3.59
3.21
2.71
2.62
2.08
1.83
1.73
1.49
1.23
0.96
0.76
opt
S
opt
S
21
21
Ang
Ang
-162
119
158
143
26
54
25
55
Common Emitter, Zo = 50 Ω
Common Emitter, Zo = 50 Ω
Ang
Ang
170
134
107
101
172
141
117
112
77
66
59
47
32
15
89
77
70
57
40
18
5
0
-32.75
-20.30
-17.57
-17.24
-16.61
-16.36
-16.05
-15.10
-12.77
-33.55
-20.85
-17.62
-17.27
-16.30
-16.28
-16.42
-16.86
-17.89
-18.40
-15.60
-8.68
-5.68
0.44
0.35
0.18
0.08
0.48
0.34
0.11
0.07
dB
R
R
dB
–
–
n
n
0.023
0.097
0.132
0.137
0.148
0.152
0.158
0.176
0.230
0.368
0.520
0.021
0.091
0.132
0.137
0.153
0.154
0.151
0.144
0.128
0.120
0.166
Mag
Mag
S
S
12
12
5
Figure 18. AT-32033 Gains vs.
Frequency at V
25
15
-5
25
15
-5
5
5
Figure 17. AT-32011 Gains vs.
Frequency at V
0
Ang
0
Ang
83
60
46
44
39
41
44
49
55
50
37
83
59
41
37
23
16
13
23
35
9
8
V
V
CE
CE
1
1
MSG
FREQUENCY (GHz)
= 1 V, I
S21
MSG
FREQUENCY (GHz)
= 1 V, I
S21
Mag
CE
Mag
0.99
0.90
0.78
0.76
0.68
0.65
0.63
0.61
0.59
0.56
0.51
2
0.99
0.92
0.82
0.79
0.71
0.67
0.65
0.62
0.61
0.59
0.59
2
MAG
= 1 V, I
CE
C
C
S
= 1 mA
S
3
3
= 1 mA
= 1 V, I
22
22
C
Ang
-114
Ang
-104
-22
-33
-35
-42
-46
-49
-55
-65
-87
= 1 mA.
-21
-32
-35
-45
-50
-53
-59
-68
-84
4
4
-5
-5
C
MAG
MSG
= 1 mA.
5
5