ATF-38143-TR2 Avago Technologies US Inc., ATF-38143-TR2 Datasheet - Page 6

TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R

ATF-38143-TR2

Manufacturer Part Number
ATF-38143-TR2
Description
TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-38143-TR2

Channel Type
N
Configuration
Single Dual Source
Gate-source Voltage (max)
4V
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-343
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-38143-TR2G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-38143 Typical Noise Parameters
V
ATF-38143 Typical Scattering Parameters,
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
6
DS
= 2 V, I
Freq.
measurements a true F
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Freq.
(GHz)
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
10.0
GHz
min
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
DS
= 5 mA
Mag.
0.98
0.95
0.93
0.87
0.82
0.80
0.75
0.71
0.67
0.66
0.66
0.68
0.70
0.72
0.74
0.78
0.82
0.83
0.85
0.87
0.88
0.88
0.89
0.18
0.21
0.22
0.26
0.29
0.32
0.40
0.48
0.60
0.70
0.84
0.96
1.12
1.27
1.38
F
dB
min
S
11
min
-120
-139
-170
is calculated. Refer to the noise parameter application section for more information.
Ang.
162
137
113
-25
-40
-51
-75
-89
-98
-16
-30
-39
-50
92
73
56
39
23
10
-2
0.69
0.69
0.68
0.68
0.66
0.65
0.62
0.59
0.50
0.49
0.51
0.53
0.54
0.59
0.62
Mag.
Γ
14.47
14.19
14.00
13.28
12.79
12.45
11.48
10.48
-0.73
-2.17
-3.54
-4.84
-6.16
-7.51
-9.07
opt
dB
8.68
7.24
6.02
4.78
3.51
2.39
1.51
0.44
-169
-140
-111
Ang.
127
163
-88
-68
14
26
27
44
59
61
80
98
5.289
5.122
5.010
4.613
4.362
4.192
3.751
3.342
2.716
2.302
2.000
1.734
1.498
1.316
1.190
1.052
0.919
0.779
0.665
0.573
0.492
0.421
0.352
Mag.
S
V
21
DS
= 2 V, I
0.25
0.23
0.22
0.20
0.17
0.17
0.14
0.11
0.08
0.04
0.04
0.09
0.20
0.36
0.60
R
n/50
-100
-117
-132
-147
-161
-176
-
Ang.
160
148
140
122
111
105
173
-10
-29
-47
-64
-83
89
76
52
30
10
DS
= 5 mA
-26.56
-22.85
-21.21
-18.49
-17.52
-16.95
-16.19
-15.70
-15.44
-15.44
-15.60
-15.92
-16.59
-17.20
-17.46
-17.86
-18.42
-19.33
-20.00
-20.45
-20.82
-21.11
-21.83
23.0
20.5
19.8
17.1
16.0
15.4
14.3
13.1
10.8
9.8
8.7
7.7
6.8
6.1
6.0
dB
dB
G
a
0.047
0.072
0.087
0.119
0.133
0.142
0.155
0.164
0.169
0.169
0.166
0.160
0.148
0.138
0.134
0.128
0.120 -106
0.108 -115
0.100 -121
0.095 -129
0.091 -136
0.088 -145
0.081 -151
Mag.
S
12
Figure 18. MSG/MAG and |S
-10
25
20
15
10
-5
5
0
0
Ang.
-12
-27
-41
-55
-67
-77
-86
-97
73
63
56
41
33
28
16
5
2
4
MSG
FREQUENCY (GHz)
6
Mag.
0.67
0.65
0.62
0.56
0.52
0.50
0.44
0.40
0.34
0.31
0.29
0.28
0.29
0.32
0.37
0.42
0.47
0.52
0.57
0.63
0.68
0.71
0.75
S
21
8
21
|
S
2
10 12
vs. Frequency at 2 V, 5 mA.
22
-110
-138
-162
Ang.
173
146
121
103
-21
-32
-40
-58
-69
-77
-94
-12
-26
-37
MAG
87
66
47
28
11
0
14 16
18
MSG/MAG
20.51
18.52
17.60
15.88
15.16
14.70
13.84
13.09
12.06
11.34
10.81
10.35
(dB)
8.89
7.33
6.93
6.66
6.22
4.93
3.95
3.58
2.90
1.98
1.24

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