CM100E3U-24H Powerex Inc, CM100E3U-24H Datasheet - Page 3

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CM100E3U-24H

Manufacturer Part Number
CM100E3U-24H
Description
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,100A I(C)
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM100E3U-24H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
15nF @ 10V
Power - Max
650W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Distributorinventory
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Voltage
1200V
Current
100A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM100E3U-24H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM100E3U-24H
Manufacturer:
MITSUBISHI
Quantity:
1 000
Part Number:
CM100E3U-24H
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM100E3U-24H
Quantity:
55
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100E3U-24H
Chopper IGBTMOD™ U-Series Module
100 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
200
160
120
80
40
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
COLLECTOR-EMITTER VOLTAGE, V
T
T
j
j
= 25
V
GATE-EMITTER VOLTAGE, V
= 25 C
GE
OUTPUT CHARACTERISTICS
o
2
4
= 20V
I
C
C
COLLECTOR-EMITTER
= 100A
(TYPICAL)
(TYPICAL)
4
8
15
12
6
I
C
GE
12
11
10
= 200A
, (VOLTS)
9
8
I
CE
C
16
8
, (VOLTS)
= 40A
10
20
R
R
Symbol
R
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
200
160
120
10
10
10
80
40
Q
D
0
3
2
1
1.0
0
EMITTER-COLLECTOR VOLTAGE, V
V
T
j
j
CE
GATE-EMITTER VOLTAGE, V
= 25 C
= 25 C unless otherwise specified
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
= 10V
1.5
T
T
Per Module, Thermal Grease Applied
4
j
j
= 25 C
= 125 C
FREE-WHEEL DIODE
Clamp Diode Part
Test Conditions
2.0
(TYPICAL)
(TYPICAL)
8
Per FWDi
Per IGBT
2.5
12
GE
, (VOLTS)
EC
3.0
16
, (VOLTS)
3.5
20
10
10
10
10
-1
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
f = 1MHz
V
Min.
GE
GE
COLLECTOR-CURRENT, I
= 0V
= 15V
40
T
T
j
j
CAPACITANCE VS. V
COLLECTOR-EMITTER
= 25 C
= 125 C
10
0.035
0
(TYPICAL)
80
(TYPICAL)
Typ.
120
C
10
, (AMPERES)
Max.
0.19
0.35
0.35
1
CE
CE
160
C
, (VOLTS)
C
C
oes
ies
res
Units
C/W
C/W
C/W
C/W
200
10
2
137
137

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