CM100MX-12A Powerex Inc, CM100MX-12A Datasheet - Page 3

• Manufacturer Part Number: CM100MX-12A
• Description: IGBT MODULE NX-SERIES CIB DP 600 100
• Manufacturer: Powerex Inc
• Type: CIB Moduler

Specifications of CM100MX-12A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 11.3nF @ 10V
• Power - Max: 400W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 600V
• Current: 100A
• Circuit Configuration: CIB Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/600 Volts
Rev. 11/08
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
R
R
V
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
R
I
I
C
GE(th)
C
C
d(on)
V
d(off)
CES
GES
th(c-f)
Q
Qrr
R
Gint
oes
t
t
EC
ies
res
t
rr
r
f
G
CHIP LOCATION (TOP VIEW)
G
26.8
29.8
Chip Location (Top View)
Q
D
0
25.8
43.2
j
IGBT
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
54
55
56
57
58
59
60
61
Inductive Load Switching Operation
V
CC
I
FWDi
C
I
C
= 300V, I
Thermal Grease Applied
53
= 100A, V
I
V
R
1
= 100A, V
C
I
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
V
CC
E
2
V
V
G
CE
I
= 100A, V
RP
C
= 100A, V
I
3
CE
GE
RN
E
= 6.2Ω, I
Test Conditions
= 300V, I
4 5
Converter Diode
= 10mA, V
V
SN
= 10V, V
Test Conditions
= 100A, V
T
Per FWDi
GE
Per IGBT
= V
= V
SP
6
C
C
7
GE
TN
= 25°C
= 100A, V
CES
GES
GE
= ±15V,
8
TP
9 10 11 12 13 14 15 16 17 18 19 20 21 22
GE
GE
= 15V, T
E
C
= 15V, T
GE
, V
, V
= 100A,
CE
U
GE
U
= 100A,
= 15V, Chip
= 0V, Chip
P
GE
P
CE
Dimensions in mm (Tolerance: ±1mm)
= 0V
U
= 10V
U
= 0V
N
GE
NTC Thermistor
N
= 0V
= 0V
V
V
j
j
P
= 125°C
P
= 25°C
= 15V
V
V
N
W
N
P
W
W
W
P
N
N
Br
Th
Br
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
30
29
28
27
26
25
24
23
5
15.6
22.6
29.2 30.0
37.4
44.8
0
0.015
21.6
270
Typ.
Typ.
3.6
2.0
1.7
1.9
1.6
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0
Max.
0.45
Max.
0.31
0.59
11.3
300
600
200
100
100
0.5
2.1
2.8
1.0
1.4
—
—
63
—
—
—
—
—
7
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns
Ω
Ω
3