CM200RX-12A Powerex Inc, CM200RX-12A Datasheet - Page 3

• Manufacturer Part Number: CM200RX-12A
• Description: IGBT MODULE NX-SERIES 7-PAC DP 600 200
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBTr

Specifications of CM200RX-12A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 27nF @ 10V
• Power - Max: 735W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Voltage: 600V
• Current: 200A
• Circuit Configuration: 7-PAC
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504-01
• Recommended Dc To Dc Converter: VLA106-15242
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Rev. 11/08
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
R
R
V
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
R
I
I
C
GE(th)
C
C
d(on)
V
d(off)
CES
GES
th(c-f)
Q
Qrr
R
Gint
oes
t
t
EC
ies
res
t
rr
r
f
G
G
Q
D
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
24.4
28.0
35.0
17.4
0
j
j
= 25°C unless otherwise specified
IGBT
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
CC
I
C
I
I
I
E
FWDi
C
E
= 300V, I
Thermal Grease Applied
= 200A, V
V
I
= 200A, V
R
= 200A, V
C
I
= 200A, V
V
CC
E
35
36
V
V
G
CE
I
= 200A, V
C
= 200A, V
U
CE
GE
U
= 5.6Ω, I
34
P
Test Conditions
= 300V, I
P
= 20mA, V
V
NTC Thermistor
= 10V, V
33 32 31 30 29 28 27 26 25 24 23 22
Test Conditions
T
Per FWDi
GE
Per IGBT
1
= V
= V
U
U
C
C
N
N
GE
= 25°C
= 200A, V
GE
CES
GES
GE
= ±15V,
GE
V
V
P
P
GE
= 15V, T
E
GE
C
= 0V, T
= 15V, T
GE
= 0V, T
, V
, V
2
V
V
= 150A,
CE
= 200A,
= 15V, Chip
N
N
= 0V, Chip
GE
CE
= 0V
= 10V
GE
Dimensions in mm (Tolerance: ±1mm)
= 0V
= 0V
j
j
j
= 125°C
21 20 19 18 17 16 15 14 13
j
= 125°C
= 25°C
3
W
W
= 25°C
= 15V
P
P
W
W
N
N
4
Th
Br
Br
Min.
Min.
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
12
11
10
9
8
7
6
5
0
18.3
26.8
39.7
0.015
1.95
530
Typ.
Typ.
5.0
2.0
1.7
1.9
1.6
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0
Max.
Max.
0.33
0.17
27.0
120
150
350
600
200
0.5
2.1
2.7
0.8
2.8
1.0
—
—
—
30
—
—
—
—
—
7
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns
Ω
Ω
3