HSMP-4810-TR1 Avago Technologies US Inc., HSMP-4810-TR1 Datasheet - Page 3

• Manufacturer Part Number: HSMP-4810-TR1
• Description: PIN DIODE,SINGLE,100V V(BR),SOT-23
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMP-4810-TR1

• Rohs Compliant: NO
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 100V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
• Resistance @ If, F: 3 Ohm @ 100mA, 100MHz
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Typical Parameters at T
Typical Parameters at T
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 4. Forward Current vs.
Forward Voltage.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
Part Number
Test Conditions
0.01
100
0.1
10
1
HSMP-
0
0
381x
2
V
F
0.2
4
REVERSE VOLTAGE (V)
– FORWARD VOLTAGE (mA)
125°C 25°C –50°C
1 MHz
30 MHz
frequency>100 MHz
6
0.4
8
10 12
0.6
Series Resistance
0.8
14
f = 100 MHz
I
F
16
R
1.0
= 1 mA
S
75
18 20
(Ω)
C
C
1.2
= 25°C
= 25°C (unless otherwise noted), Single Diode
Typical Applications for Multiple Diode Products
INPUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
10000
1000
Figure 2. RF Resistance vs. Forward
Bias Current.
Carrier Lifetime
100
10
0.01
1
I
I
I
R
F
F
= 250 mA
– FORWARD BIAS CURRENT (mA)
τ (ns)
= 50 mA
1500
0.1
1
T
T
T
A
A
A
= +85°C
= +25°C
= –55°C
Reverse Recovery Time
VARIABLE BIAS
10
VOLTAGE
90% Recovery
FIXED
BIAS
I
V
F
T
R
= 20 mA
100
rr
300
= 10 V
(ns)
3
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
120
110
100
90
80
70
60
50
40
1000
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE (OHMS)
Total Capacitance
100
0.27 @ 50 V
f = 1 MHz
C
RF IN/OUT
T
(pF)
10