SI4124DY-T1-E3 Vishay, SI4124DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4124DY-T1-E3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4124DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
7.0
5.6
4.2
2.8
1.4
0.0
0
Power Derating, Junction-to-Foot
25
D
is based on T
T
C
50
- Case Temperature (°C)
75
J(max)
25
20
15
10
5
0
0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Current Derating*, Junction-to-Foot
25
125
New Product
T
C
50
- Case Temperature (°C)
150
75
100
1.80
1.44
1.08
0.72
0.36
0.00
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4124DY
www.vishay.com
125
150
5