SI4276DY-T1-GE3 Vishay

SI4276DY-T1-GE3

Manufacturer Part Number

SI4276DY-T1-GE3

Description

Dual N-Ch MOSFET SO-8 30 V 15.3 - 28 Mohm @10V

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI4276DY-T1-GE3

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

15.3 mOhm @ 9.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

26nC @ 10V

Input Capacitance (ciss) @ Vds

1000pF @ 15V

Power - Max

3.6W, 2.8W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI4276DY-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4276DY-T1-GE3

Manufacturer:

VISHAY

Quantity:

12 500

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