SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet

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SI4276DY-T1-E3

Manufacturer Part Number
SI4276DY-T1-E3
Description
MOSFET 2N-CH 30V 8A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4276DY-T1-E3

Input Capacitance (ciss) @ Vds
1000pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15.3 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Power - Max
3.6W, 2.8W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4276DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 107 °C/W (Ch 1) and 110 °C/W (Ch 2).
e. Package limited.
Document Number: 66599
S10-1289-Rev. A, 31-May-10
Ordering Information: Si4276DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Channel 1
Channel 2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
G
G
S
S
1
1
2
2
C
V
1
2
3
4
DS
= 25 °C.
30
30
(V)
Top View
SO-8
0.0184 at V
0.0340 at V
0.0153 at V
0.0280 at V
R
J
DS(on)
= 150 °C)
b, d
Dual N-Channel 30 V (D-S) MOSFET
8
7
6
5
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
D
D
D
D
1
1
2
2
I
D
t ≤ 10 s
Steady
7.1
8
8
(A)
8
e
e
A
a
= 25 °C, unless otherwise noted
Q
g
8.4
3.6
(Typ.)
Symbol
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
R
R
C
C
A
A
C
A
C
C
A
A
thJA
thJF
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• DC/DC for Notebook PC
Typical
Definition
Compliant to RoHS Directive 2002/95/EC
47
30
Channel 1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
Maximum
®
Power MOSFET
60
35
G
Channel 1
1
8
7.6
1.7
2.1
1.3
N-Channel MOSFET
b, c, e
3.0
3.6
2.3
8
8
50
20
20
e
e
b, c
b, c
b, c
b, c
Typical
- 55 to 150
58
38
D
S
± 20
Channel 2
1
1
30
Vishay Siliconix
Channel 2
Maximum
6.8
5.5
1.7
2.0
1.3
G
6.4
2.3
2.8
1.8
30
10
Si4276DY
8
5
62.5
2
b, c
b, c
b, c
b, c
b, c
45
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4276DY-T1-E3

SI4276DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4276DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4276DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage ΔV V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State R b Resistance b Forward Transconductance a Dynamic ...

Page 3

... ≅ 5 Ω GEN d(on) Channel Ω ≅ GEN g Channel 2 t d(off) = 2.7 Ω ≅ GEN ° 7 5 Channel 7.7 A, dI/dt = 100 A/µ Channel 5.5 A, dI/dt = 100 A/µ Si4276DY Vishay Siliconix a Min. Typ. Max Ω Ω 2 0.82 1 0.85 1 ° ...

Page 4

... Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 Drain Current (A) D On-Resistance vs. Drain Current 9 7 Total Gate Charge (nC) g Gate Charge www.vishay.com 1.5 2.0 ...

Page 5

... Limited DS(on °C 0.1 A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4276DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 μ ...

Page 6

... Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 66599 S10-1289-Rev. A, 31-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4276DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA - ( ...

Page 8

... Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.045 0.030 0.015 0.000 Drain Current (A) D On-Resistance vs. Drain Current 6 7 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1.5 2.0 500 ...

Page 9

... Limited DS(on °C 0.1 A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4276DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.001 0.01 0 100 Time (s) Single Pulse Power, Junction-to-Ambient 100 μ ...

Page 10

... Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66599. Document Number: 66599 S10-1289-Rev. A, 31-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4276DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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