4N35-X009T Vishay, 4N35-X009T Datasheet - Page 2

• Manufacturer Part Number: 4N35-X009T
• Description: OPTOCOUPLER
• Manufacturer: Vishay

Specifications of 4N35-X009T

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SMD
• No. Of Pins: 6
• Leaded Process Compatible: Yes
• Isolation Voltage: 5.3kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Current Transfer Ratio: 50 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4N35-X, 4N36-X, 4N37-X, 4N38
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
154
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage
Clearance
Isolation thickness between emitter
and detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Junction capacitance
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown
voltage
Emitter collector breakdown
voltage
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
(2)
(2)
(2)
(2)
For technical questions, contact:
I
F
DIN IEC 112/VDE 0303, part 1
= 10 mA, T
Optocoupler, Phototransistor Output,
V
V
V
V
TEST CONDITION
distance to seating plane
IO
R
R
max.10 s dip soldering:
IO
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 500 V, T
TEST CONDITION
I
= 500 V, T
I
E
F
I
V
C
= 100 µA
= 10 mA
R
= 1 mA
(1)
≥ 1.5 mm
= 6 V
t ≤ 10 µs
(1)
t ≤ 1 ms
amb
with Base Connection
= - 55 °C
amb
amb
= 100 °C
= 25 °C
[e-mail]
PART
4N35
4N36
4N37
4N38
SYMBOL
SYMBOL
V
V
P
P
T
BV
BV
BV
BV
BV
I
V
T
T
R
R
FSM
V
CEO
EBO
I
I
amb
I
diss
diss
T
ISO
stg
C
C
C
sld
F
IO
IO
V
V
C
R
I
j
R
CEO
CEO
CEO
CEO
ECO
O
F
F
j
MIN.
0.9
30
30
30
80
7
- 55 to + 150
- 55 to + 100
VALUE
5300
≥ 0.4
10
10
100
100
150
175
100
260
2.5
≥ 7
≥ 7
60
70
50
6
7
12
11
TYP.
1.3
1.3
0.1
50
25
Document Number: 83717
MAX.
1.5
1.7
Rev. 1.7, 13-Oct-09
10
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
V
A
V
V
Ω
Ω
UNIT
pF
µA
pF
V
V
V
V
V
V
V