H11N1 Fairchild Semiconductor, H11N1 Datasheet
H11N1
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H11N1 Summary of contents
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... ANODE 2 CATHODE 3 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Description The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shap- ing ...
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... Detector Power Dissipation @ 25°C D Derate Linearly from 25° Allowed Range Allowed Range Output Current O 4 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 25°C unless otherwise specified.) A Parameters 2 Value Units -40 to +150 °C -40 to +85 °C 260 for 10 sec °C 250 mW 2.94 mW/°C 30 ...
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... LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA. 2. H11N1 910 , H11N2 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 10mA ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...
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... I – INPUT CURRENT (mA) F Figure 4. Threshold Current vs. Temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 – TEMPERATURE ( C) ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 H11N1 270 0 Figure 1. Switching Test Circuit and Waveforms Figure 3. Threshold Current vs. Supply Voltage 1.4 1 ...
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... Typical Performance Curves Figure 6. Supply Current vs. Supply Voltage - STATE 10mA 2 OFF STATE – SUPPLY VOLTAGE (V) CC ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 (Continued) Figure 7. LED Forward Voltage vs. Forward Current 100 1 - 1.2 1.4 1.6 1.8 V – FORWARD VOLTAGE (V) F www.fairchildsemi.com ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Order Entry Identifier (Example) H11N1M ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 12.0 0.1 2.0 0.05 4.0 0.1 10.1 0.20 260 C Time above 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 9 Ø ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...