IL1207AT Vishay, IL1207AT Datasheet - Page 2

• Manufacturer Part Number: IL1207AT
• Description: OPTOCOUPLER, PHOTOTRANSISTOR, 4000VRMS
• Manufacturer: Vishay

Specifications of IL1207AT

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Ctr Max: 200%
• Isolation Voltage: 4kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 240 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOIC-8 Narrow
• Ctr Min: 100%
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors
Notes
(1)
(2)
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
302
amb
Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
Operating temperature
Total package dissipation (LED and detector)
Storage temperature
Soldering temperature
Derate linearly from 25 °C
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown current
Saturation voltage, collector emitter
COUPLER
DC current transfer ratio
Capacitance (input to output)
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
100
90
80
70
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100 110 120
(2)
T
amb
(°C)
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor Output,
I
I
F
F
I
with Base Connection in SOIC-8
C
= 1.0 mA, V
TEST CONDITION
= 10 mA, V
= 2 mA, I
I
I
max. 10 s, dip soldering distance
V
I
C
E
F
(1)
V
V
CE
Package, 110 °C Rated
= 100 µA
= 100 µA
= 10 mA
R
R
to seating plane ≥ 1.5 mm
= 6 V
= 0 V
= 10 V
F
TEST CONDITION
CE
CE
= 10 mA
= 5.0 V
= 5.0 V
IL1205AT
IL1206AT
IL1207AT
IL1208AT
IL1205AT
IL1206AT
IL1207AT
IL1208AT
PART
Fig. 2 - Output Power Dissipation vs. Ambient Temperature
SYMBOL
BV
BV
BV
V
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
I
C
CEO
CEsat
V
C
I
R
CEO
ECO
CBO
IO
F
I
SYMBOL
T
V
T
140
130
120
P
T
160
150
110
100
amb
90
70
60
50
40
30
20
10
ISO
80
stg
sld
tot
0
0 10 20 30 40 50 60 70 80 90 100 110 120
MIN.
100
100
7.0
70
70
40
63
13
22
34
56
T
- 55 to + 110
- 55 to + 150
amb
VALUE
TYP.
1.3
0.1
5.0
0.5
4000
13
10
25
40
60
95
260
(°C)
2.4
240
Document Number: 83549
MAX.
Rev. 1.7, 08-May-08
100
125
200
320
1.5
0.4
50
80
mW/°C
UNIT
V
°C
mW
°C
°C
RMS
UNIT
µA
pF
nA
pF
%
%
%
%
%
%
%
%
V
V
V
V
V