TEMD1000 Vishay, TEMD1000 Datasheet - Page 2

• Manufacturer Part Number: TEMD1000
• Description: DIODE, PHOTO, 940NM, 15°, SMD
• Manufacturer: Vishay
• Type: Chipr

Specifications of TEMD1000

• Wavelength Typ: 940nm
• Sensitivity: 0.6A/W
• Half Angle: 15°
• Dark Current: 1nA
• Diode Case Style: SMD
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +85°C
• Msl: MSL 3 - 168 Hours
• Forward Voltage: 1V
• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 75 mW
• Maximum Light Current: 12 uA
• Maximum Dark Current: 10 nA
• Maximum Rise Time: 4 ns
• Maximum Fall Time: 4 ns
• Package / Case: SMD-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Responsivity: 0.6A/W
• Dark Current (max): 10nA
• Power Dissipation: 75mW
• Light Current: 12uA
• Rise Time: 4ns
• Fall Time: 4ns
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BASIC CHARACTERISTICS (T
Rev. 2.2, 29-Jun-11
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Temperature coefficient of I
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
94 8416
94 8427
1000
1.4
1.2
1.0
0.8
0.6
100
10
1
0
www.vishay.com
20
T
amb
T
amb
20
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Ambient Temperature (°C)
40
- Ambient Temperature (°C)
ra
λ = 950 nm
40
V
R
= 5 V
60
60
V
V
V
amb
For technical questions, contact:
TEMD1000, TEMD1020, TEMD1030, TEMD1040
R
R
R
amb
E
E
= 10 V
= 10 V, R
= 10 V, R
V
e
e
80
= 1 mW/cm
= 1 mW/cm
R
= 25 °C, unless otherwise specified)
V
V
V
= 5 V, f = 1 MHz, E = 0
TEST CONDITION
80
= 25 °C, unless otherwise specified)
R
R
R
I
R
V
= 5 V,  = 870 nm,
= 5 V,  = 870 nm
= 5 V,  = 950 nm
= 100 μA, E = 0
R
I
= 10 V, E = 0
F
L
L
V
V
100
= 50 mA
100
R
R
= 50 ,  = 820 nm
= 50 ,  = 820 nm
= 5 V
= 5 V
2
2
,  = 870 nm,
,  = 950 nm,
2
[e-mail]
SYMBOL
V
TK
s()
s()

C
V

I
I
I
(BR)

t
t
ro
ra
ra
0.5
p
r
f
F
D
Ira
Fig. 4 - Diode Capacitance vs. Reverse Voltage
16055
94 8430
Fig. 3 - Reverse Light Current vs. Irradiance
www.vishay.com/doc?91000
100
1.0
0.1
10
8
6
4
2
0
0.1
0.01
MIN.
60
5
Vishay Semiconductors
V
E
R
e
- Reverse Voltage (V)
790 to 1050
- Irradiance (mW/cm²)
0.1
1
TYP.
0.60
0.55
± 15
940
1.8
0.2
10
12
1
1
4
4
f = 1 MHz
E = 0
λ = 950 nm
V
Document Number: 81564
CE
10
1
= 5 V
MAX.
1.3
10
100
10
UNIT
%/K
A/W
A/W
deg
nm
nm
nA
pF
μA
μA
ns
ns
V
V