VTP8440H EXCELITAS TECH, VTP8440H Datasheet
VTP8440H
Manufacturer Part Number
VTP8440H
Description
Photo Diode
Manufacturer
EXCELITAS TECH
Datasheet
1.VTP8440H.pdf
(1 pages)
Specifications of VTP8440H
Wavelength Typ
925nm
Sensitivity
0.55A/W
Half Angle
50°
Dark Current
15nA
No. Of Pins
2
Operating Temperature Range
-20°C To +75°C
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic
package. Chip is coated with a protective layer
of clear epoxy. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
VTP Process Photodiodes
SYMBOL
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
TC V
TC I
NEP
V
R
V
I
Re
S
range
C
D*
SC
I
OC
SH
BR
1/2
D
R
J
p
SC
OC
Short Circuit Current
I
Open Circuit Voltage
V
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
SC
OC
Temperature Coefficient
Temperature Coefficient
CHARACTERISTIC
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
@ Peak
TEST CONDITIONS
RoHS Compliant
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
62
(See also VTP curves, pages 45-46)
Phone: 877-734-6786 Fax: 450-424-3413
Min.
400
30
50
CHIP ACTIVE AREA: .008 in
CASE 21 8 mm CERAMIC
1.8 x 10
1.3 x 10
VTP8440H
inch (mm)
.025
Typ.
-2.0
350
925
140
±50
.20
.55
55
.5
-13
12
(Typ.)
(Typ.)
VTP8440H
2
-20°C to 75°C
-20°C to 75°C
(5.16 mm
1150
www.perkinelmer.com/opto
Max.
15
15
2
)
cm Hz W
W
A/(W/cm
Degrees
UNITS
mV/°C
%/°C
A/W
G
mV
nm
nm
µA
nA
pF
V
Hz
2
)
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