CNY17G-3 Vishay, CNY17G-3 Datasheet - Page 3

• Manufacturer Part Number: CNY17G-3
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of CNY17G-3

• Leaded Process Compatible: Yes
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Document Number: 83886
Rev. 1.6, 13-Oct-09
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
AC isolation test voltage (RMS)
Tracking resistance
(comparative tracking index)
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
/I
F
94 9182
300
250
200
150
100
50
0
0
Fig. 1 - Derating Diagram
T
25
si
- Safety Temperature (°C)
IR-diode
I
si
50
(mA)
P
Phototransistor
si
75
For technical questions, contact:
(mW)
V
V
V
V
TEST CONDITION
IO
CE
IO
CE
(construction test only)
TEST CONDITION
100
t
Tr
Optocoupler, Phototransistor Output,
= 500 V, T
= 500 V, T
TEST CONDITION
= 5 V, I
= 5 V, I
f = 50 Hz, t = 1 s
100 %, t
= 60 s, t
(see figure 2)
V
125
IO
= 500 V
F
F
= 10 mA
test
= 1 mA
test
amb
amb
with Base Connection
150
= 1 s
= 10 s,
= 100 °C
= 150 °C
SYMBOL
CNY17G-1
CNY17G-2
CNY17G-3
CNY17G-4
CNY17G-1
CNY17G-2
CNY17G-3
CNY17G-2
V
P
[e-mail]
SYMBOL
IOTM
T
PART
I
diss
F
si
V
V
CTI
V
V
R
R
R
IOTM
ISO
pd
pd
IO
IO
IO
Fig. 2 - Test Pulse Diagram for Sample Test According to
13930
V
V
V
IOWM
IOTM
IORM
SYMBOL
V
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
MIN.
Pd
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
0
3750
MIN.
10
10
10
1.6
1.3
6
12
11
9
t
1
MIN.
Vishay Semiconductors
100
160
TYP.
t
t
t
40
63
13
22
34
56
1
3
stres
t
, t
test
, t
TYP.
275
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
MAX.
130
265
150
MAX.
6
MAX.
t
2
125
200
320
200
CNY17G
80
t
3
www.vishay.com
t
t
stres
test
t
t
4
UNIT
UNIT
V
mW
mA
kV
°C
kV
kV
kV
RMS
UNIT
Ω
Ω
Ω
%
%
%
%
%
%
%
%
3