SI6955ADQ-T1-E3 Vishay, SI6955ADQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI6955ADQ-T1-E3
• Description: MOSFET P-CH D-S 30V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6955ADQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71103
S-81221-Rev. B, 02-Jun-08
0.30
0.24
0.18
0.12
0.06
30
10
10
0
1
8
6
4
2
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
V
= 3.9 A
GS
On-Resistance vs. Drain Current
= 10 V
0.3
3
2
V
= 4.5 V
SD
Q
- Source-to-Drain Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.6
T
6
4
J
= 150 °C
0.9
9
6
T
J
V
= 25 °C
GS
1.2
12
8
= 10 V
1.5
15
10
1000
0.40
0.32
0.24
0.16
0.08
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 3.9 A
= 10 V
6
2
V
V
T
C
DS
0
GS
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
12
4
I
D
C
50
= 3.9 A
Vishay Siliconix
iss
Si6955ADQ
18
6
75
www.vishay.com
100
24
8
125
150
30
10
3