BPW36 Fairchild Semiconductor, BPW36 Datasheet

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BPW36

Manufacturer Part Number
BPW36
Description
Photodetector Transistors 6mA IR PHOTO TRAN
Manufacturer
Fairchild Semiconductor
Type
Photo Transistorr
Datasheet

Specifications of BPW36

Maximum Power Dissipation
600 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 65 C
Package / Case
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
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Quantity
Price
Part Number:
BPW36
Quantity:
3 306
DS300279
  2001 Fairchild Semiconductor Corporation
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
ABSOLUTE MAXIMUM RATINGS
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (T
Power Dissipation (T
unless otherwise specified.
0.040 (1.02)
0.040 (1.02)
0.030 (0.76)
0.50 (12.7)
3/13/01
NOM
Emitter
0.184 (4.67)
Base
MIN
PACKAGE DIMENSIONS
Parameter
A
C
= 25°C)
= 25°C)
45°
0.209 (5.31)
(3,4,5 and 6)
(3,4 and 6)
(1)
(2)
0.100 (2.54)
0.050 (1.27)
0.020 (0.51) 3X
Ø0.100 (2.54)
Collector
(Case)
0.255 (6.48)
HERMETIC SILICON PHOTOTRANSISTOR
(T
A
= 25°C unless otherwise specified)
Symbol
T
T
1 OF 4
T
V
V
V
T
SOL-F
SOL-I
P
P
OPR
CEO
CBO
STG
EBO
D
D
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
5. Soldering iron tip
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
DESCRIPTION
• The BPW36/37 are silicon phototransistors
agents.
940 nm.
mounted in narrow angle TO-18 packages.
260 for 10 sec
1/16”
240 for 5 sec
-65 to +125
-65 to +150
Rating
BPW36/BPW37
(1.6mm) minimum from housing.
300
600
45
45
5
SCHEMATIC
B
C
E
www.fairchildsemi.com
Unit
mW
mW
°C
°C
°C
°C
V
V
V

Related parts for BPW36

BPW36 Summary of contents

Page 1

... Hermetically sealed package • Narrow reception angle • European “Pro Electron” registered DESCRIPTION 0.255 (6.48) • The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages. Collector (Case) 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. Ø0.100 (2.54) 2. Derate power dissipation linearly 6.00 mW/° ...

Page 2

... ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current BPW36 On-State Collector Current BPW37 Turn-On Time Turn-Off Time Saturation Voltage TYPICAL PERFORMANCE CURVES mW/cm 10 mW/cm 1.0 5 mW/cm 2 mW/cm 0.1 1 mW/cm Normalized to: ...

Page 3

... OFF 100 L 0.1 1 OUTPUT CURRENT (mA) L Fig. 4 Switching Times vs. Output Current CQX14 BPW36 OR BPW37 Normalized to: CQX14 Input = CEO I = 100 µ 25˚ TEMPERATURE (˚C) A Fig. 6 Normalized Light Current vs. Temperature Both Emitter (CQX14) and Detector (BPW36 or BPW37) at Same Temperature www.fairchildsemi.com = 100 = 10 100 85 105 ...

Page 4

... HERMETIC SILICON PHOTOTRANSISTOR 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness BPW36/BPW37 3/13/01 DS300279 ...

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