TLP559(IGM,F) Toshiba, TLP559(IGM,F) Datasheet

Page 1

... Transistor Inverters Air Conditioner Inverters Line Receivers Intelligent Power Modules (IPMs) Interfaces The TOSHIBA TLP559(IGM) consists of a high-output GaAlAs light emitting diode optically coupled to a high-speed photodiode with a transistor amplifier. The TLP559(IGM) has no internal base connection. The Faraday shield in the photodetector chip provides an effective common-mode noise transient immunity ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Electrical Characteristics CHARACTERISTIC Forward Voltage Forward Voltage Temperature Coefficient Reverse Current Capacitance between Terminal High Level Output Current High Level Supply Voltage Supply Voltage Output Voltage Coupled Electrical Characteristics CHARACTERISTIC Current Transfer Ratio Low Level Output Voltage Isolation Characteristics CHARACTERISTIC ...

Page 4

Switching Characteristics CHARACTERISTIC Propagation Delay Time (H→L) Propagation Delay Time (L→H) Switching Time Dispersion between ON and OFF Common Mode Transient Immunity at Logic High Output (Note 8) Common Mode Transient Immunity at Logic Low Output (Note 8) (Note 8) ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...