SI1431DH-T1-E3 Vishay, SI1431DH-T1-E3 Datasheet

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SI1431DH-T1-E3

Manufacturer Part Number
SI1431DH-T1-E3
Description
MOSFET N-CH 30V SOT363
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1431DH-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
3V @ 100µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Power - Max
950mW
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1431DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
0.355 at V
0.200 at V
R
DS(on)
J
a
= 150 °C)
GS
a
GS
= - 4.5 V
(Ω)
= - 10 V
D
D
G
Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free)
P-Channel 30 V (D-S) MOSFET
a
1
2
3
SC-70 (6-LEADS)
SOT-363
a
Top View
A
I
= 25 °C, unless otherwise noted
- 2.0
- 1.6
D
Steady State
Steady State
(A)
T
T
T
T
Si1431DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
A
A
A
A
t ≤ 5 s
6
5
4
= 25 °C
= 85 °C
= 25 °C
= 85 °C
D
D
S
FEATURES
APPLICATIONS
Marking Code
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
BF
Symbol
Symbol
T
R
R
J
Definition
- Notebook PC
- Servers
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
XX
Part # Code
stg
Lot Traceability
and Date Code
®
Power MOSFET
Typical
- 2.0
- 1.5
- 1.2
1.45
0.75
105
5 s
65
40
- 55 to 150
± 20
- 30
- 8
Steady State
Maximum
- 1.7
- 1.2
- 0.8
0.95
130
0.5
85
50
Vishay Siliconix
Si1431DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1431DH-T1-E3 Summary of contents

Page 1

... R (Ω) DS DS(on) 0.200 0.355 4 Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1431DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72694 S10-0646-Rev. B, 22-Mar- °C J 0.9 1.2 1.5 Si1431DH Vishay Siliconix 300 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1.2 1 ...

Page 4

... Si1431DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.9 0 250 µA D 0.3 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 10 Limited (DS) °C A Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72694. Document Number: 72694 S10-0646-Rev. B, 22-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1431DH Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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